Description:
1:resistivity:30 ~ 120ohm2:floating zone technology
3:diameter:2'' , 3'', 4''
4:N<111>
5:two-sided lapping
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application area
floating zone silicon''s traditional usage is in power electronics, which is made forpower electronics component e.g. SCR MOSFET IGBT and soon.and nowadays floating zone technology is also beenused in green energy resource area.photoelectricity conversionefficiency will reach 25% , while the efficiency will be 12%more by pulling of single crystal silicon
the FZ growersprinciples:
The growth proess starts by inserting a polycrystalline ingotinto the upper chamber/pulling arrangment.Thereafter the ingot ispre-heated by means of a graphite heater.After pre-heating, thegraphite heater is swung away and the cone-shaped ingot is loweredinto the active zone of the high frequency coil.which is ableto melt the silicon ingot to the seed crystal.The one-passmonocrystalline growth process can begin now.
