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Description:
d>| Linear Derating Factor | 2.0 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 560 | mJ |
| IAR | Avalanche Current | 50 | A |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 10 | V/ns |
| TJ TSTG | Operating Junction and Storage Temperature Range | -55 to 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
