Our factory can maufacture the IC Prime grade 4 inch, 6 inch Oxided silicon wafer
Growth Method CZ Conductivity
Type P/N Dopant
N type: Arsenic(As), Phosphorus(pH), Antimony(Sb)
P type: Boron(B)
Resistivity: 0.001 ~ 1ohm-cm, 1 ~ 100 ohm-cm
Oxided layer thickness: Customization
Refractive rate: 1.45~1.466
Dielectric strength: 6.8~9(1*10e6 Volt/Cm)

Wafer thickness: Customization
Crystal orientation: <100>; <111>; <110>;
Surface: Single/double side polished no scratch, no saw mark, no chip, no stain
Packing Aluminum foil vacuum packing particle <10 @ 0.3um or <10 @ 0.2um
Roughness < 0.5nm
TTV < 4um
TIR < 4um
Bow < 30um
Warp < 30um
25PC/cassette