SiC crystal
Technological capability:
1. 2"-4" SiC wafers, including: N type SiC, semi-insulating 6H-SiC4H-SiC
2. Surface roughness <0.3nm
3. Microtubules density<10/cm2, stabilized crystal structure (>90%), controlled conduction type (n type or semi-insulating)
4. Self-owned intellectual property right
SIC CRYSTAL WAFER STANDARD SPECIFICATION
SI-6H-SIC 2inch 3inch 4inch
Diameter 50.8± 0.1mm 76.2± 0.25mm 100± 0.38mm
Micropipe Density <10/cm2 <10/cm2 <10/cm2
Resistivity >105Ω. Cm >105Ω. Cm >105Ω. Cm
Thichness 350± 25µ M 380± 25µ M 550± 25µ M
Orientation (0001)± 0.2° (0001)± 0.2° (0001)± 0.2°
Surface Roughness <0.5nm <0.5nm <0.5nm
TTV <10µ M <10µ M <10µ M
Warp <20µ M <30µ M <35µ M
Surface Finish Si-face Epi-ready, C-face polished Si-face Epi-ready, C-face polished Si-face Epi-ready, C-face polished
SI-4H-SIC 2inch 3inch 4inch
Diameter 50.8± 0.1mm 76.2± 0.25mm 100± 0.38mm
Micropipe Density <10/cm2 <10/cm2 <10/cm2
Resistivity >105Ω. Cm >105Ω. Cm >105Ω. Cm
Thichness 350± 25µ M 380± 25µ M 550± 25µ M
Orientation (0001)± 0.2° (0001)± 0.2° (0001)± 0.2°
Surface Roughness <0.5nm <0.5nm <0.5nm
TTV <10µ M <10µ M <10µ M
Warp <20µ M <30µ M <35µ M
Surface Finish Si-face Epi-ready, C-face polished Si-face Epi-ready, C-face polished Si-face Epi-ready, C-face polished
N type 4H-SIC 2inch 3inch 4inch
Diameter 50.8± 0.1mm 76.2± 0.25mm 100± 0.38mm
Micropipe Density <10/cm2 <10/cm2 <10/cm2
Resistivity 0.025-0.1Ω. Cm 0.025-0.1Ω. Cm 0.025-0.1Ω. Cm
Thichness 350± 25µ M 380± 25µ M 550± 25µ M
Orientation (0001)± 0.2° , 4° Toward<11-20>± 0.5° (0001)± 0.2° , 4° Toward<11-20>± 0.5° (0001)± 0.2° , 4° Toward<11-20>± 0.5°
Surface Roughness <0.5nm <0.5nm <0.5nm
TTV <10µ M <10µ M <10µ M
Warp <20µ M <30µ M <35µ M
Surface Finish Si-face Epi-ready, C-face polished Si-face Epi-ready, C-face polished Si-face Epi-ready, C-face polished