Growth Method FZ
Conductivity Type P/N/intrinstic
Dopant N type: Arsenic(As), Phosphorus(pH), Antimony(Sb)
P type: Boron(B)
Resistivity: > 100 ohm-cm, 1000 - 10000ohm-cm
Thickness: Customization
Crystal orientation: <100> <111> <110>
Surface: Single/double side polished
No scratch, no saw mark, no chip, no stain
Packing Aluminum foil vacuum packing
Particle <10 @ 0.3um, <10 @ 0.2um
Roughness<0.5nm
TTV < 4um
TIR < 4um
Bow < 30um
Warp < 30um