Applications:
LED, All color FPD: LCD backlight, LED monitor
Specifications:
ItemGaN-T-NGaN-T-S
Dimensions 2"
Thickness20 μ M, 30 μ M30 μ M, 90 μ M
OrientationC-axis(0001) ± 1°
Conduction TypeN-typeSemi-Insulating
Resistivity(300K)< 0.05 Ω @cm106 Ω @cm
Dislocation DensityLess than 1x108 cm-2
Substrate structureThick GaN on Sapphire(0001)
Useable Surface Area> 90%
PackagePackaged in a class 100 clean room environment, in cassettes of 25PCS or single wafer containers, under a nitrogen atmosphere.