CSP 50N06, field effect transistor
1. Vdss: 60 v
2. RDS(on): 18 mill-ohm
3. ID: 50A; Package: To -220
4. Certification: RoHS compliant
5. Features
5.1 RDS(on)=23m@vgs=10 v
5.2 ultra low gatecharge (typical 30 nc)
5.3 low reverse transfer capacitance( crss = typical 80 pF)
5.4 fast swithching capability
5.5 100% avalanche energy specified
5.6 improved dwdt capability
6. Description:
The csi50N06 is three -terminal silion device with current conduction capability of about 50A, fast swithching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
It is mainly suitable electronic ballast and low power appliance