Product Description
Silicon epitaxial planar diode
Fast switching diode
Mechanical data:
Case: DO-35 glass case
Weight: Approx 0. 13g
Packing codes/options: 100K/box
Maximum ratings and thermal characteristics:
Parameter: Reverse voltage

Symbol: VR
Limit: 75V
Parameter: Peak reverse voltage
Symbol: VRM
Limit: 100V
Parameter: Surge forward current at t<1s and Tj=25 degrees Celsius
Symbol: IFSM
Limit: 500mA
Parameter: Junction temperature
Symbol: Tj
Limit: 175 degrees Celsius
Parameter: Storage temperature
Symbol: TS
Limit: -65 to 175 degrees Celsius
Paramter: Thermal-resistance junction to ambient air
Symbol: RQJA
Limit: 350 degrees Celsius/W
Parameter: Average rectified current half wave rectification with resistive load at Tamb=25 degrees Celsius
Symbol: IF(AV)
Limit: 150mA
OEM/ODM are welcome.