Dimension:
125mm *125mm +/-0.5mm
Wafer Thickness:
0.220mm +/-0.020mm
Front(-):
1.8mm bus bars(silver), Blue anti-reflecting coasting (silicon nitride)
Back (+):
3.0mm wide soldering pads (silver/aluminum), Back surface field(aluminum)

ELECTRICAL CHARACTERISTICS Dimensions(mm) Conversion efficiency(%) Maximum power Pmax(W) Optimum operating voltage Vm(mV) Optimum operating current Im(A) Open-circuit voltage Voc(mV) Short-circuit current Isc(A)
125*125 17.30-17.40 2.58 0.521 4.95 0.623 5.33
17.20-17.30 2.56 0.519 4.94 0.622 5.30
17.10-17.20 2.55 0.518 4.92 0.621 5.29
17.00-17.10 2.53 0.516 4.91 0.620 5.29
16.75-17.00 2.50 0.513 4.89 0.617 5.27
16.50-16.75 2.47 0.511 4.83 0.617 5.23
16.25-16.50 2.43 0.515 4.71 0.617 5.05
16.00-16.25 2.40 0.512 4.67 0.615 5.02
15.75-16.00 2.36 0.508 4.64 0.612 5.01
15.50-15.75 2.32 0.504 4.61 0.609 4.97
15.25-15.50 2.29 0.500 4.58 0.606 4.95
15.00-15.25 2.25 0.497 4.53 0.605 4.92
14.75-15.00 2.21 0.494 4.48 0.607 4.89
14.50-14.75 2.17 0.491 4.42 0.604 4.84
14.25-14.50 2.14 0.488 4.38 0.602 4.80
14.00-14.25 2.12 0.487 4.31 0.600 4.71
13.00-14.00 2.03 0.479 4.21 0.595 4.72
12.00-13.00 1.85 0.469 3.99 0.593 4.64

TYPICAL TEMPERATURE COEFFICIENTS
Voltage -0.38 %/K
Current +0.04 %/K
Power -0.46 %/K
TYPICAL I-V CURVE
(Cell Efficiency 17.30-17.40%)