Specification:
Dimension: 156*156mm
Conductivity: P type(Boron Doped)
Resistivity: 0.8-3.0Ωcm
Life time: Min. 2μs
Thickness: 200+/-20μm
TTV: Max. 30μm
BOW<50μm
Saw Marks: Max. 20μm
Squaring Angle: 90° +/- 0.3°
Edge Defect: Depth ≤ 0.3mm, Length ≤ 0.5mm, ≤ 2 per wafer
Oxygen Concentration < 8.0x10 E17Atoms/ cm 3
Carbon Concerntration <1.0 x10E 18 Atoms / cm 3
Surface clean and free from visible stains, no visible cracks, no holes, no visible knife-edges.