Product: Mono-crystalline silicon wafer
Method of crystal silicon growth: CZ
Conductivity type: P type
Doping agent: B
Electric resistivity: 1~3, 3~6Ω . Cm
O content: 1× 10 18 atom/cm 3
C content: 1× 10 17 atom/cm 3
Structural feature: Parameter
Width: 156.0 mm ± 0.5mm
Diameter: 200.0 mm ± 0.5 mm
Orientation: <100>
Thickness: 180± 20μ M; 200± 20μ M
Mechanical properties: Parameter
Yotal thickness variation(TTV): ≤ 40μ M
Bending: ≤ 70μ M
Surface: Non-crystalline structure
Saw cut: ≤ 15μ M