Mono-crystalline wafer, 156mm x 156mm
General Data Data
Product Mono-crystalline wafer
Crystal growth method CZ
Conduction type P P type
Doping agent Boron
Resistivity 1~3, 3~6Ω . Cm
Oxygen content 1× 10 18 atom/cm 3
Carbon content 1× 10 17 atom/cm 3
Structure feature Data

Width 156.0 mm ± 0.5mm
Diameter 200.0 mm ± 0.5 mm
Crystal orientation <100>
Thickness 180± 20μ M; 200± 20μ M
Mechanical data Data
Thickness tolerence ≤ 40μ M
Bending ≤ 70μ M
Surface
Non-microcrystalline structure
Saw-cut ≤ 15μ M