Size: 6 inch
Conductivity type: P-type
Dopant: Boron
Thickness: 200+20μ M
Resistivity: 1-3Ω Cm 2-4Ω Cm
Oxygen concentration: <1X1018atoms/cm3
Carbon concentration: <5X1016atoms/cm3
Lifetime: Over 10μ S
Chamfer discrepancy: 0.5mm
Vertical angle deviate: 90+0.3°
Orientation: <100>+2°
Dislocation Density: Less more 3000/cm2
TTV: Warp: <50μ M
Saw marks: <15μ M
Cracks and pin holes: No visual cracks and V-type pin holes
Edge: No edge defect and silicon drop

Surface:
1. As clean, cut, No stains and detergent vestigital.
2. No visual knife marks, concave pit.