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FET type: 2 P-channel (dual) FET feature: logic level gate
Drain to source voltage (Vdss): 20V
Current-continuous drain (Id) at 25°C: 430mA
Rds on (maximum) at Id, Vgs: 900mOhm at 430mA, 4.5V
Vgs (th) (maximum) at Id: 1V at 250uA
Gate charge (Qg) at Vgs: 2.5nC at 4.5V
Input capacitance (Ciss) at Vds: 175pF at 16V
Maximum power: 250mW
Mounting type: surface mount
Packaging/case: SOT-563 and SOT-666
Compliant with the RoHS Directive
FOB port: Shenzhen,HongKong
Lead time: 3~15 business days
Various MOSFETs are available,welcome to inquire us for more details.
